IT993310B - Circuito per il rifornimento di cariche elettriche particolarmente per memorie di tipo dinamico - Google Patents
Circuito per il rifornimento di cariche elettriche particolarmente per memorie di tipo dinamicoInfo
- Publication number
- IT993310B IT993310B IT29121/73A IT2912173A IT993310B IT 993310 B IT993310 B IT 993310B IT 29121/73 A IT29121/73 A IT 29121/73A IT 2912173 A IT2912173 A IT 2912173A IT 993310 B IT993310 B IT 993310B
- Authority
- IT
- Italy
- Prior art keywords
- supply
- circuit
- electrical charges
- dynamic memories
- charges especially
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/406—Management or control of the refreshing or charge-regeneration cycles
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/405—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with three charge-transfer gates, e.g. MOS transistors, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4076—Timing circuits
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9437072A JPS568435B2 (en]) | 1972-09-19 | 1972-09-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
IT993310B true IT993310B (it) | 1975-09-30 |
Family
ID=14108414
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT29121/73A IT993310B (it) | 1972-09-19 | 1973-09-19 | Circuito per il rifornimento di cariche elettriche particolarmente per memorie di tipo dinamico |
Country Status (6)
Country | Link |
---|---|
US (1) | US3832699A (en]) |
JP (1) | JPS568435B2 (en]) |
DE (1) | DE2347229C3 (en]) |
FR (1) | FR2200582B1 (en]) |
GB (1) | GB1451363A (en]) |
IT (1) | IT993310B (en]) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3964030A (en) * | 1973-12-10 | 1976-06-15 | Bell Telephone Laboratories, Incorporated | Semiconductor memory array |
US4133611A (en) * | 1977-07-08 | 1979-01-09 | Xerox Corporation | Two-page interweaved random access memory configuration |
US4231110A (en) * | 1979-01-29 | 1980-10-28 | Fairchild Camera And Instrument Corp. | Memory array with sequential row and column addressing |
JPS55105893A (en) * | 1979-01-31 | 1980-08-13 | Sharp Corp | Driving unit of dynamic memory |
EP0067992A1 (en) * | 1980-12-24 | 1983-01-05 | Mostek Corporation | Row driver circuit for semiconductor memory |
US4338679A (en) * | 1980-12-24 | 1982-07-06 | Mostek Corporation | Row driver circuit for semiconductor memory |
US4404662A (en) * | 1981-07-06 | 1983-09-13 | International Business Machines Corporation | Method and circuit for accessing an integrated semiconductor memory |
JPS5957525A (ja) * | 1982-09-28 | 1984-04-03 | Fujitsu Ltd | Cmis回路装置 |
GB2360113B (en) * | 2000-03-08 | 2004-11-10 | Seiko Epson Corp | Dynamic random access memory |
US6711052B2 (en) * | 2002-06-28 | 2004-03-23 | Motorola, Inc. | Memory having a precharge circuit and method therefor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3748651A (en) * | 1972-02-16 | 1973-07-24 | Cogar Corp | Refresh control for add-on semiconductor memory |
US3790961A (en) * | 1972-06-09 | 1974-02-05 | Advanced Memory Syst Inc | Random access dynamic semiconductor memory system |
-
1972
- 1972-09-19 JP JP9437072A patent/JPS568435B2/ja not_active Expired
-
1973
- 1973-09-18 US US00398340A patent/US3832699A/en not_active Expired - Lifetime
- 1973-09-19 IT IT29121/73A patent/IT993310B/it active
- 1973-09-19 DE DE2347229A patent/DE2347229C3/de not_active Expired
- 1973-09-19 GB GB4401973A patent/GB1451363A/en not_active Expired
- 1973-09-19 FR FR7333634A patent/FR2200582B1/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US3832699A (en) | 1974-08-27 |
DE2347229B2 (de) | 1978-03-23 |
GB1451363A (en) | 1976-09-29 |
JPS568435B2 (en]) | 1981-02-24 |
DE2347229A1 (de) | 1974-05-02 |
FR2200582B1 (en]) | 1977-10-07 |
JPS4951833A (en]) | 1974-05-20 |
FR2200582A1 (en]) | 1974-04-19 |
DE2347229C3 (de) | 1978-11-23 |
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